dorsal/arxiv
View SchemaFractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
| Authors | V. N. Jmerik, D. V. Nechaev, E. A. Evropeitsev, E. M. Roginskii, A. N. Semenov, M. A. Yagovkina, P. A. Alekseev, V. I. Kozlovsky, M. M. Zverev, N. A. Gamov, Tao Wang, Xinqiang Wang, T. V. Shubina, A. A. Toropov |
|---|---|
| Categories | |
| ArXiv ID | 2601.08410vv2 |
| URL | https://arxiv.org/abs/2601.08410 |
| License | http://creativecommons.org/licenses/by/4.0/ |
Abstract
The paper reports on fundamental properties of the GaN/AlN quantum wells (QWs) with nominal subcritical thicknesses of 0.75-2 monolayers (MLs). They are grown by plasma-activated molecular beam epitaxy, varying either the nominal thickness or the gallium-to-nitrogen flux ratio. In situ monitoring reveals difference in 2D nucleation and step-flow growth modes of the QWs. The emission charactestics of QWs with integer thicknesses of 1 and 2 MLs depend weakly on the growth mechanism. In contrast, the intensity and spectral position luminescence of QWs with fractional-ML thicknesses are determined by the growth mechanism. Using ab initio calculations, a phenomenological model is proposed that describes fractional-ML QWs either as arrays of 2D quantum disks or as arrays of 2D quantum ribbons, in cases where 2D nucleation or step-flow growth mechanisms predominate, respectively. This model is generally consistent with experimental data on photo- and cathodoluminescence of heterostructures with multiple (250) GaN/AlN QWs. These heterostructures, when pumped by electrom beam at an energy 12.5 keV with a maximum pulse current of 2 A, exhibit linear current dependences of optical peak powers up to 1 and 37 W for wavelengths of 228 and 256 nm, respectively, making them promising for use as powerfull ultraviolet-C emitters.
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"abstract": "The paper reports on fundamental properties of the GaN/AlN quantum wells (QWs) with nominal subcritical thicknesses of 0.75-2 monolayers (MLs). They are grown by plasma-activated molecular beam epitaxy, varying either the nominal thickness or the gallium-to-nitrogen flux ratio. In situ monitoring reveals difference in 2D nucleation and step-flow growth modes of the QWs. The emission charactestics of QWs with integer thicknesses of 1 and 2 MLs depend weakly on the growth mechanism. In contrast, the intensity and spectral position luminescence of QWs with fractional-ML thicknesses are determined by the growth mechanism. Using ab initio calculations, a phenomenological model is proposed that describes fractional-ML QWs either as arrays of 2D quantum disks or as arrays of 2D quantum ribbons, in cases where 2D nucleation or step-flow growth mechanisms predominate, respectively. This model is generally consistent with experimental data on photo- and cathodoluminescence of heterostructures with multiple (250) GaN/AlN QWs. These heterostructures, when pumped by electrom beam at an energy 12.5 keV with a maximum pulse current of 2 A, exhibit linear current dependences of optical peak powers up to 1 and 37 W for wavelengths of 228 and 256 nm, respectively, making them promising for use as powerfull ultraviolet-C emitters.",
"arxiv_id": "2601.08410",
"authors": [
"V. N. Jmerik",
"D. V. Nechaev",
"E. A. Evropeitsev",
"E. M. Roginskii",
"A. N. Semenov",
"M. A. Yagovkina",
"P. A. Alekseev",
"V. I. Kozlovsky",
"M. M. Zverev",
"N. A. Gamov",
"Tao Wang",
"Xinqiang Wang",
"T. V. Shubina",
"A. A. Toropov"
],
"categories": [
"cond-mat.mtrl-sci"
],
"license": "http://creativecommons.org/licenses/by/4.0/",
"title": "Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications",
"url": "https://arxiv.org/abs/2601.08410",
"version": "v2"
},
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