{
  "annotation_id": "90289bfc-d810-4f44-9df2-bf129fc33818",
  "date_created": "2026-02-17T05:53:23.803000Z",
  "date_modified": "2026-02-17T05:53:23.803000Z",
  "file_hash": "6b231f44c1a3ce6e184d97ea1ce787616ae538b7f4a1b4295d5a9db5a2af4431",
  "private": false,
  "record": {
    "abstract": "The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large enhancement of about 24 times in the saturation anomalous Hall resistance (R_Ahs) and anomalous Hall sensitivity (S) has been observed upon decreasing N from 20 to 1. When compared with the bulk Fe, the values of R_Ahs and anomalous Hall coefficient, Rs obtained for N= 1 were enhanced by about 5 and 3 orders of magnitude, respectively. The Rs follows the longitudinal electrical resistivity Rho as Rs proportional to Rho^2.1, suggesting side jump as the dominant mechanism of the AHE. The S as high as 22 Ohm/T over a wide operational field range of -8 to +8 kOe has been obtained for N = 1.",
    "arxiv_id": "2601.10182",
    "authors": [
      "Sudhansu Sekhar Das",
      "M. Senthil Kumar"
    ],
    "categories": [
      "cond-mat.mtrl-sci"
    ],
    "doi": "10.1109/TMAG.2014.2328631",
    "journal_ref": "IEEE Transactions on Magnetics, vol. 50, no. 11, pp. 1-4, Nov. 2014, Art no. 2005604",
    "license": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
    "title": "Effect of Number of Bilayers on the Anomalous Hall Effect in [Si/Fe]N Multilayers",
    "url": "https://arxiv.org/abs/2601.10182",
    "version": "v1"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "b71dcfa7-8a1b-4ebf-adaa-2dc112e89189",
    "id": "arXiv Dataset",
    "type": "Model",
    "variant": "snapshot-2026-01-17",
    "version": "0.1.0"
  },
  "user_id": 1000002
}