{
  "annotation_id": "c4560162-f09e-4498-9905-34752440bac2",
  "date_created": "2026-02-17T05:53:23.560000Z",
  "date_modified": "2026-02-17T05:53:23.560000Z",
  "file_hash": "73dd7a8f618ad2abda04073eb1a874c1351d33f8fd8d783af12e041a77ae72a0",
  "private": false,
  "record": {
    "abstract": "Bright electroluminescence (EL) from dopant-free ambipolar lateral p-n junctions in GaAs/AlGaAs single heterointerface (SH) heterostructures is used to probe neutral free excitons arising from two-dimensional electron and hole gases (2DEGs and 2DHGs). The EL spectra reveal both the heavy-hole neutral free exciton (X$^0$) and the high-energy free exciton of the H band (HE). A combination of transition energies, lifetimes, spatial emission profiles, and temperature dependences points to a predominantly two-dimensional character for these excitons at the SH. For X$^0$, the EL peak energies (1515.5-1515.7 meV) lie slightly above the corresponding bulk GaAs photoluminescence (PL) line at 1515.3 meV, while time-resolved measurements yield markedly shorter lifetimes for EL than for PL (337 ps vs. 1610 ps), consistent with recombination in a confined interfacial layer. The HE exciton exhibits a Stark blueshift under forward bias below threshold, and its energies and lifetimes (down to 575 ps) are tuned by the topgate voltage; above threshold, HE emission is quenched in favor of X$^0$. Finally, the tidal effect $-$ a form of pulsed EL generated by swapping the topgate voltage polarity in ambipolar field-effect transistors $-$ produces an X$^0$ line at the same energy as in the lateral p-n junction and reproduces the characteristic nonmonotonic frequency dependence of the brightness previously observed in quantum-well heterostructures, again indicating a 2D-like origin. Taken together, these results show electrically generated and controllable 2D-like excitons (HE and X$^0$), thereby bridging 2D exciton physics and 2DEG/2DHG platforms in dopant-free GaAs/AlGaAs SH devices.",
    "arxiv_id": "2601.10081",
    "authors": [
      "N. Sherlekar",
      "S. R. Harrigan",
      "L. Tian",
      "B. Cunard",
      "Y. Qi",
      "B. Khromets",
      "M. C. Tam",
      "H. S. Kim",
      "Z. R. Wasilewski",
      "J. Baugh",
      "M. E. Reimer",
      "F. Sfigakis"
    ],
    "categories": [
      "cond-mat.mes-hall"
    ],
    "license": "http://creativecommons.org/licenses/by/4.0/",
    "title": "Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect",
    "url": "https://arxiv.org/abs/2601.10081",
    "version": "v1"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "3b9d37f8-b07e-412e-8f01-77307fb0a7b7",
    "id": "arXiv Dataset",
    "type": "Model",
    "variant": "snapshot-2026-01-17",
    "version": "0.1.0"
  },
  "user_id": 1000002
}