{
  "annotation_id": "fae7838e-43f6-4df7-9d6d-c66c5b8fb191",
  "date_created": "2026-02-17T05:53:15.442000Z",
  "date_modified": "2026-02-17T05:53:15.442000Z",
  "file_hash": "3f8530119187632bdccca30640656ec08f3e4770d80cdcaf38a9ea39a7be4b96",
  "private": false,
  "record": {
    "abstract": "The family of transition metal dichalcogenides (TMDCs) has been regarded as promising candidates for future electronics, valleytronics, spintronics, and optoelectronics. While most of TMDCs are intrinsic n-type semiconductors due to electron donation from chalcogen vacancies, realizing intrinsic p-type TMDCs and achieving precise control over their electronic properties remain challenging. In this work, we introduce a powerful approach to obtain intrinsic hole doping by substituting Ta atom into 2H-WSe2. A combining study of molecular beam epitaxy growth and in-situ angle-resolved photoemission spectroscopy characterization clearly reveals that Ta substitution induces a significant hole doping and provides a possible way of a semiconductor-to-metal transition in 2H-WSe2.",
    "arxiv_id": "2601.08284",
    "authors": [
      "Minhee Kang",
      "Woojin Choi",
      "Choongyu Hwang",
      "Jinwoong Hwang"
    ],
    "categories": [
      "cond-mat.mtrl-sci"
    ],
    "doi": "10.5757/ASCT.2025.34.6.194",
    "journal_ref": "Applied Science and Convergence Technology, 34 (6); 194-197 (2025)",
    "license": "http://creativecommons.org/licenses/by/4.0/",
    "title": "Giant Hole-doping in 2H-WSe2 via Ta Substitution",
    "url": "https://arxiv.org/abs/2601.08284",
    "version": "v1"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "9aae8e56-6491-4518-9c74-7bcc0a61c6d7",
    "id": "arXiv Dataset",
    "type": "Model",
    "variant": "snapshot-2026-01-17",
    "version": "0.1.0"
  },
  "user_id": 1000002
}